savantic semiconductor product specification silicon npn power transistors 2SC2023 d escription with to-220c package high breakdown voltage applications series regulator, switch, and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 2 a i b base current 0.2 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2023 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ; i b =0 300 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 1.0 v i cbo collector cut-off current v cb =300v ;i e =0 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe dc current gain i c =0.5 a ; v ce =4v 30 f t transition frequency i c =0.2a ; v ce =12v 10 mhz c ob collector output capacitance f=1mhz ; v cb =10v 75 pf switching times t on turn-on time 0.30 s t s storage time 4.00 s t f fall time i c =1a, i b1 =0.1a i b2 =-0.2a; v cc =100v r l =100 @ 1.00 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC2023 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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